IEDM

IEDM
Name	IEEE International Electron Devices Meeting
Acronym	IEDM
Discipline	Semiconductor device, Solid-state physics, Microelectronics
Established	1955
Frequency	Annual
Organizer	Institute of Electrical and Electronics Engineers
Typical location	San Francisco, Hawaii, San Diego

IEDM

The International Electron Devices Meeting is an annual technical conference focusing on semiconductor device research, integrated circuit innovation, and advanced microelectronics materials and processes. Participants include researchers from Bell Labs, Intel Corporation, IBM, TSMC, Samsung Electronics, GlobalFoundries, Applied Materials, and academic groups from Massachusetts Institute of Technology, Stanford University, University of California, Berkeley, University of Tokyo, and Tsinghua University. The meeting serves as a forum linking developments at DARPA, European Commission, National Institute of Standards and Technology, Japan Society for the Promotion of Science, and industry consortia such as SEMATECH and International Roadmap for Devices and Systems.

History

The conference began in the mid-20th century with participation from Bell Labs, RCA, Texas Instruments, Fairchild Semiconductor, and General Electric, reflecting the postwar expansion of Bell Telephone Laboratories research. Early meetings featured contributions from pioneers affiliated with John Bardeen, Walter Brattain, William Shockley, Gordon Moore, Robert Noyce, and Jack Kilby, leading into collaborations with NASA, National Aeronautics and Space Administration, and Defense Advanced Research Projects Agency. Throughout the Cold War era, attendees included representatives from IBM Research, Hewlett-Packard, Motorola, and Hitachi, while later decades saw growth from Intel, AMD, Nokia, Sony, and Panasonic. The 1990s and 2000s expanded international participation from TSMC, UMC, SK Hynix, Micron Technology, ASML Holding, and Tokyo Electron with academic additions from University of Cambridge, ETH Zurich, Caltech, and Peking University.

Scope and Topics

Topics at the meeting cover MOSFET scaling, novel channel materials like graphene, transition metal dichalcogenide, and III-V semiconductor systems, as well as device concepts including FinFET, gate-all-around transistor, spintronics, memristor, resistive random-access memory, and magnetoresistive random-access memory. Presentations address lithography advances from extreme ultraviolet lithography vendors such as ASML and Nikon Corporation, deposition tools from Applied Materials and Lam Research, and metrology from KLA Corporation. The program spans work on cryogenic devices relevant to Google and IBM Quantum, power electronics used by Infineon Technologies and ON Semiconductor, and sensors impacting Honeywell, Bosch, and Texas Instruments. Cross-disciplinary sessions include collaborations with Lawrence Berkeley National Laboratory, Argonne National Laboratory, Sandia National Laboratories, and CERN.

Organization and Sponsorship

The meeting is organized under the auspices of Institute of Electrical and Electronics Engineers technical units with steering committees formed from industry and academia, including representatives from IEEE Electron Devices Society, IEEE Solid-State Circuits Society, IEEE Reliability Society, and IEEE Nanotechnology Council. Sponsorship and exhibition frequently involve Intel Corporation, Samsung Electronics, TSMC, Applied Materials, ASML Holding, Lam Research, KLA Corporation, Synopsys, Cadence Design Systems, and Mentor Graphics. Academic program committees draw members from Massachusetts Institute of Technology, Stanford University, University of California, Berkeley, University of Illinois Urbana-Champaign, National University of Singapore, and Seoul National University. Funding and project links connect to DARPA, European Research Council, National Science Foundation, Japan Science and Technology Agency, and corporate R&D groups at Microsoft Research and Google Research.

Conference Program and Activities

The meeting format includes peer-reviewed technical sessions, poster sessions, keynote talks, panel discussions, and tutorials featuring leaders from Intel, Samsung, IBM, TSMC, Applied Materials, and ASML. Keynotes have been delivered by executives and researchers associated with Gordon Moore, Andy Grove, Pat Gelsinger, Lisa Su, Jensen Huang, and scientists from Bell Labs, IBM Research, NIST, and Lawrence Livermore National Laboratory. Panels often tackle roadmaps involving International Technology Roadmap for Semiconductors stakeholders and consortia such as SEMATECH and Global Semiconductor Alliance. Professional activities include industry exhibits where Synopsys, Cadence Design Systems, Ansys, Keysight Technologies, and National Instruments demonstrate tools, and short courses run by faculty from MIT, Stanford, Harvard University, and Princeton University.

Notable Papers and Contributions

Papers presented have historically introduced game-changing technologies: scaling studies influencing Moore's Law discussions, demonstrations of FinFET devices by teams from Intel and TSMC, reports on high-k dielectric stacks from IMEC and IBM Research, and breakthroughs in spintronics involving researchers tied to University of Cambridge and Tohoku University. Memory innovations such as phase-change memory and resistive RAM from Micron Technology, Samsung Electronics, and SK Hynix were disseminated here, alongside reports on 3D NAND stacking by Toshiba Corporation and Western Digital. Work on two-dimensional materials from Columbia University and University of Manchester and on quantum devices from University of California, Santa Barbara and Yale University have also been highlighted.

Impact and Industry Influence

The meeting influences roadmaps, fabrication investments, and startup formation, informing decisions at Intel Corporation, TSMC, Samsung Electronics, GlobalFoundries, Micron Technology, and SK Hynix. Technology transfer from presentations has accelerated product cycles at Apple Inc. and Qualcomm, guided manufacturing choices by Applied Materials customers, and influenced standards discussions involving JEDEC, SEMI, and ISO. The conference also shapes academic curricula at Massachusetts Institute of Technology, Stanford University, University of California, Berkeley, University of Illinois Urbana-Champaign, and influences national science policy via National Science Foundation and Department of Energy advisory panels.

Category:Conferences in electronics