IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices
Title	IEEE Transactions on Electron Devices
Discipline	Electrical engineering; Solid-state physics; Semiconductor devices
Abbreviation	IEEE Trans. Electron Devices
Publisher	Institute of Electrical and Electronics Engineers
Country	United States
Frequency	Biweekly
History	1954–present

Contents

IEEE Transactions on Electron Devices is a peer-reviewed scientific journal publishing research on semiconductor devices, microelectronics, and related technologies. It is sponsored by the IEEE Electron Devices Society and serves researchers across Bell Labs, Intel, IBM, Texas Instruments, and academic institutions such as Massachusetts Institute of Technology, Stanford University, University of California, Berkeley, and University of Cambridge. The journal bridges work from laboratories like Rutherford Appleton Laboratory and Fraunhofer Society with conferences such as the International Electron Devices Meeting and the Symposium on VLSI Technology.

History

The journal traces roots to early postwar publications and predecessors linked to the Institute of Radio Engineers and the American Institute of Electrical Engineers before the formation of the Institute of Electrical and Electronics Engineers. Early landmark coverage paralleled advances at Bell Labs, Fairchild Semiconductor, and Shockley Semiconductor Laboratory during the 1950s and 1960s, documenting inventions related to the Bipolar junction transistor, metal–oxide–semiconductor field-effect transistor, and developments led by figures associated with William Shockley, John Bardeen, Walter Brattain, and other pioneers. Through the 1970s and 1980s the journal chronicled scaling trends influenced by Gordon Moore and industrial shifts involving Intel Corporation, Hewlett-Packard, and National Semiconductor. In the 1990s and 2000s it incorporated work on compound semiconductors, heterojunctions, and emerging materials researched at institutions including Bellcore, Argonne National Laboratory, and Lawrence Berkeley National Laboratory.

The journal covers device physics and technology spanning CMOS and FinFET architectures, research on graphene and two-dimensional materials from groups at Columbia University and University of Manchester, and studies of III-V semiconductor devices relevant to companies like NVIDIA and AMD. Articles address fabrication methods used in fabs such as TSMC and GlobalFoundries, characterization techniques connected to facilities at Sandia National Laboratories, and modeling approaches inspired by work from University of Illinois Urbana-Champaign and University of Michigan. It includes contributions on power devices influencing applications at General Electric and ABB, optoelectronic devices linked to Bell Labs Innovations and Nokia Bell Labs, and sensors and MEMS researched at Carnegie Mellon University and Caltech.

The journal is published by the Institute of Electrical and Electronics Engineers under the governance of the IEEE Electron Devices Society with an editorial board drawn from academics and industry researchers affiliated with Princeton University, Cornell University, ETH Zurich, Imperial College London, and Seoul National University. It employs peer review practices in line with standards promoted by organizations like the Committee on Publication Ethics and editorial policies resonant with publishers such as Nature Publishing Group and IEEE Spectrum governance. Issues are released on a biweekly schedule and managed through submission systems utilized by journals such as IEEE Transactions on Nanotechnology and IEEE Journal of Solid-State Circuits.

Published papers have reported foundational measurements and models tied to breakthroughs by laboratories including Bell Labs, theoretical advances by researchers from Princeton University and University of California, Santa Barbara, and device demonstrations related to innovators at Intel and Sony. Influential contributions documented scaling trends paralleling observations by Gordon Moore and experimental reports on novel device concepts such as tunnel field-effect transistors and single-electron transistors from teams at University of Cambridge and Kavli Institute. The journal has disseminated key work on reliability and failure mechanisms studied by groups at Los Alamos National Laboratory and Duke University, as well as multidisciplinary studies connecting to initiatives at MIT Lincoln Laboratory and Volkswagen research labs.

The journal is distributed through the IEEE Xplore digital library and is available to subscribers including universities like Harvard University, Yale University, University of Tokyo, and corporations such as Samsung Electronics and Micron Technology. Content is accessible via institutional subscriptions, individual memberships in the IEEE Electron Devices Society, and licensing agreements with aggregators similar to Elsevier and Springer Nature for cross-referencing. Special issues and conference-linked collections have been coordinated with events such as the International Electron Devices Meeting and workshops hosted by the Materials Research Society.

Category:Academic journals Category:IEEE journals Category:Electrical engineering publications