International Conference on Solid State Devices and Materials

International Conference on Solid State Devices and Materials
Name	International Conference on Solid State Devices and Materials
Abbreviation	SSDM
Discipline	Semiconductor device, Materials science
Established	1969
Frequency	Annual

Contents

International Conference on Solid State Devices and Materials The International Conference on Solid State Devices and Materials is an annual scientific meeting focusing on Semiconductor device research, Materials science advances, and applied technologies, attracting researchers from Japan, United States, Germany, France, and China. The conference brings together contributors from institutions such as The University of Tokyo, Massachusetts Institute of Technology, Stanford University, National Institute of Advanced Industrial Science and Technology, and Tsinghua University to present developments in device fabrication, characterization, and materials integration. SSDM sessions often intersect with topics discussed at events like International Electron Devices Meeting, Materials Research Society, IEEE conferences, and workshops held by Japan Society of Applied Physics.

History

The conference was inaugurated in 1969, reflecting postwar expansions in semiconductor research driven by collaborations among researchers at Bell Laboratories, Hitachi, NEC Corporation, Texas Instruments, and Sony Corporation. Early meetings featured contributions from figures associated with Intel, Fairchild Semiconductor, Mitsubishi Electric, Fujitsu Limited, and Kyoto University, mirroring developments in silicon device scaling and compound semiconductor exploration. During the 1970s and 1980s the program broadened to include work linked to Tokyo Institute of Technology, Nagoya University, University of California, Berkeley, IBM, and Delft University of Technology, reflecting global shifts toward integrated circuit manufacturing and thin-film technologies. In the 1990s and 2000s, collaborations with researchers from Seoul National University, National University of Singapore, Korea Advanced Institute of Science and Technology, European Materials Research Society, and Chinese Academy of Sciences influenced the conference's emphasis on heterostructures, nanofabrication, and interface science. Recent decades have seen contributions from teams associated with National Institute of Standards and Technology, Riken, École Polytechnique, University of Cambridge, and University of Oxford addressing two-dimensional materials, wide-bandgap semiconductors, and quantum devices.

SSDM covers a range of subjects including device physics researched at Princeton University, materials synthesis methods studied at University of Illinois Urbana-Champaign, and characterization techniques developed at Lawrence Berkeley National Laboratory, Argonne National Laboratory, and Sandia National Laboratories. Typical topics include silicon technology overlapping with work from Sematech and IMEC, compound semiconductors connected to Epitaxy researchers at University of California, Santa Barbara, optoelectronic devices related to Bell Labs and Osaka University, power electronics investigated by Rohm Co., Ltd. and Infineon Technologies, and sensor technologies linked to Nanyang Technological University and Imperial College London. The program also addresses thin films and interfaces studied by teams at Max Planck Society, nanostructures explored by California Institute of Technology, and quantum device concepts pursued at University of New South Wales and Massachusetts Institute of Technology.

Organization typically involves academic societies such as Japan Society of Applied Physics, technical committees from IEEE Electron Devices Society, and university departments including Tohoku University and Kyoto University. Sponsors have included corporations and national laboratories like Toshiba, Sony Corporation, Mitsubishi Electric, ROHM Semiconductor, National Institute for Materials Science, and Hitachi. Local organizing committees often coordinate with municipal authorities in host cities such as Tokyo, Osaka, Yokohama, Kyoto, and Sapporo, and collaborate with international partners such as European Research Council-affiliated centers, Korean Institute of Electrical Engineers, and Chinese Society of Micro-Nano Technology.

Proceedings are published as conference volumes and often indexed alongside papers from IEEE Xplore, Springer Nature, and society archives maintained by Japan Society of Applied Physics. Selected papers are later expanded for journals including Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Advanced Materials, and Nature Materials, with authors affiliated to Seoul National University, Peking University, University of California, Berkeley, The University of Tokyo, and University of Cambridge. Special issues and invited-review collections have been organized with editors from Riken, École Polytechnique, Northwestern University, and National Taiwan University to highlight advances in fabrication, characterization, and device integration.

Notable presentations have included milestone reports on silicon MOSFET scaling related to researchers from Intel and University of California, Berkeley, demonstrations of gallium nitride devices linked to work at Cree, Inc. and Nagoya University, and early reports on graphene devices associated with University of Manchester and Columbia University. Award recipients and invited lecturers have been drawn from laureates and leaders at Nobel Prize-connected institutions, prominent labs such as Bell Laboratories and IBM Research, and universities including Stanford University, Princeton University, and Massachusetts Institute of Technology. Student paper awards and young researcher prizes have recognized contributors from Korea Advanced Institute of Science and Technology, Tsinghua University, National University of Singapore, and University of Tokyo.

The conference is held annually, most frequently in Japanese cities such as Tokyo, Osaka, Yokohama, and Sapporo, with periodic international participation from delegations representing United States, China, South Korea, Germany, and France. Rotations and special sessions have coincided with other events such as International Electron Devices Meeting, Symposium on VLSI Technology, and Materials Research Society meetings, facilitating joint symposia and collaborative workshops involving institutions like IMEC, NIST, Riken, and Max Planck Society.

Category:Conferences in Japan Category:Semiconductor conferences Category:Materials science conferences