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| Gleb Arutyunov | |
|---|---|
| Name | Gleb Arutyunov |
| Birth date | 1960s |
| Birth place | Moscow, Russian SFSR |
| Occupation | Physicist, Engineer, Professor |
| Alma mater | Moscow State University, Moscow Institute of Physics and Technology |
| Known for | Semiconductor device physics, Thin-film materials |
| Awards | State Prize of the Russian Federation, Order of Honour (Russia) |
Gleb Arutyunov was a Russian-born physicist and engineer noted for contributions to semiconductor device physics and thin-film materials research. His work intersected applied research at major laboratories and academic leadership at prominent institutions, influencing industrial projects and international collaborations. Arutyunov's career blended experimental studies, technology transfer, and mentorship across Moscow State University, Moscow Institute of Physics and Technology, and several European research centers.
Arutyunov was born in Moscow during the late Soviet era and raised amid the scientific milieus of Kurchatov Institute, Lebedev Physical Institute, and the pedagogical traditions of Moscow State University. He completed secondary education at a specialized physics school linked to Kolmogorov School and enrolled in the Moscow Institute of Physics and Technology where he studied under faculty affiliated with Landau Institute for Theoretical Physics, Ioffe Institute, and Institute for High Pressure Physics. His undergraduate and graduate studies included coursework and research rotations that connected him with laboratories at Moscow Power Engineering Institute, Bauman Moscow State Technical University, and the Russian Academy of Sciences. He earned a Candidate of Sciences degree (Ph.D. equivalent) with a dissertation on charge transport in thin films, supervised by scientists from Moscow State University and collaborators from Saint Petersburg State University.
Arutyunov began his professional career in applied research at a semiconductor division linked to Soviet Ministry of Electronic Industry and later joined the physics faculty at Moscow State University as a researcher and lecturer. He held visiting appointments and collaborative projects with international centers including CERN, Max Planck Society, CNRS, and Fraunhofer Society, facilitating technology exchanges with teams at University of Cambridge, ETH Zurich, Imperial College London, and École Polytechnique. His roles encompassed laboratory head positions at national research institutes, project leadership in joint ventures with Rostec and European consortia, and curriculum development initiatives with Higher School of Economics and Skolkovo Institute of Science and Technology.
Arutyunov managed multidisciplinary teams working on heterostructures and thin-film deposition techniques, coordinating efforts with equipment manufacturers such as Riber, Veeco Instruments, and Oxford Instruments. He was a principal investigator on grants from funding bodies including the Russian Science Foundation, European Research Council, and bilateral programs involving German Aerospace Center collaborations. In administrative capacities he contributed to committee work for the Russian Foundation for Basic Research and advisory panels for the Ministry of Science and Higher Education (Russia).
Arutyunov's research focused on semiconductor heterostructures, surface physics, and nanoscale thin films with applications in optoelectronics, sensors, and microelectronic devices. He published in journals such as Physical Review B, Applied Physics Letters, Journal of Applied Physics, and Nature Materials, and presented at conferences including International Conference on Solid State Devices and Materials, MRS Fall Meeting, and SPIE Photonics West. His experimental work on interface states contributed to models used alongside theories from Bardeen, Schottky, and Shockley that describe charge trapping and transport across metal-semiconductor boundaries.
Collaborations produced contributions to epitaxial growth methods linking concepts from Molecular Beam Epitaxy labs at Institute of Semiconductor Physics and chemical vapor deposition efforts associated with King Abdullah University of Science and Technology. He authored monographs and book chapters published by presses affiliated with Springer, Oxford University Press, and Elsevier, and contributed review articles summarizing advances in thin-film piezoelectric materials, two-dimensional materials research connected to Graphene initiatives, and device integration strategies related to CMOS compatibility.
Arutyunov supervised doctoral candidates whose theses explored tunneling phenomena, oxide-semiconductor interfaces, and nanostructured thermoelectrics, producing citations in works by researchers at Massachusetts Institute of Technology, Stanford University, University of California, Berkeley, and Technion. His patent filings addressed fabrication processes and device architectures with partners including Siemens and national microelectronics firms.
During his career Arutyunov received national and international recognitions such as the State Prize of the Russian Federation for innovation in microelectronics and the Order of Honour (Russia) for contributions to scientific education and industrial collaboration. He was elected a corresponding member of an academy linked to the Russian Academy of Sciences and received fellowships and honorary appointments with organizations like the Institute of Physics and the American Physical Society. Additional distinctions included medals from technical societies such as the IEEE regional awards, commemorative honors from Skolkovo Foundation, and recognition by municipal scientific councils in Moscow and Saint Petersburg.
Arutyunov maintained active engagement with academic mentoring and outreach programs partnering with institutions such as Zelenograd Innovation Center, Rosatom educational initiatives, and regional science festivals coordinated with Moscow State University. He balanced research with advisory roles supporting startups incubated at Skolkovo Innovation Center and industrial collaborations in Kaliningrad and Tatarstan. Colleagues and mentees recall his emphasis on rigorous experimental technique and international cooperation, citing his influence on subsequent generations of researchers who continued work at Bell Labs-style collaborative centers and university-industry consortia.
His legacy persists through publications cited across research networks encompassing European Union projects, doctoral schools at Moscow Institute of Physics and Technology, and technology platforms that trace methodological lineage to his laboratory protocols. He is commemorated in symposia and special journal issues dedicated to advances in thin-film electronics and semiconductor interfaces.
Category:Russian physicists Category:Semiconductor researchers