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| InSb | |
|---|---|
| Name | Indium antimonide |
| Formula | InSb |
| Cas number | 1302-04-3 |
| Molar mass | 149.638 g·mol⁻¹ |
| Appearance | gray crystalline |
| Density | 5.77 g·cm⁻³ |
| Melting point | 803 K (530 °C) |
| Band gap | 0.17 eV (300 K) |
InSb
InSb is a III–V compound semiconductor notable for its narrow band gap and high electron mobility, widely studied at institutions such as Massachusetts Institute of Technology, Stanford University, University of Cambridge, Bell Labs, and IBM Research. Research on InSb links to projects at facilities like CERN, NASA, DARPA, Los Alamos National Laboratory, and Sandia National Laboratories, and it has been featured in journals associated with American Physical Society, Nature Publishing Group, and Science Advances. Historic investigations involved scientists connected to Niels Bohr Institute, Max Planck Society, and Imperial College London, shaping semiconductor technology alongside materials such as gallium arsenide, silicon carbide, and germanium.
InSb crystallizes in the zincblende structure, a cubic lattice related to structures studied in classic works at Harvard University, University of Oxford, and ETH Zurich. Its lattice constant and cohesive properties were characterized in collaborations with laboratories like Argonne National Laboratory and Rutherford Appleton Laboratory. Physical parameters have been measured using techniques developed at Brookhaven National Laboratory, Lawrence Berkeley National Laboratory, and National Institute of Standards and Technology. Experimental characterization often involves instrumentation and collaborations with groups at European Synchrotron Radiation Facility, SLAC National Accelerator Laboratory, and MAX IV Laboratory.
InSb’s small direct band gap around 0.17 eV at room temperature gives it strong infrared absorption, a property exploited in sensors developed with partners such as Honeywell, Raytheon Technologies, Boeing, and Lockheed Martin. Its high electron mobility—among the highest for III–V compounds—has made it a platform for quantum transport experiments at University of Copenhagen, Caltech, and Oxford University Department of Physics. Studies of Landau levels, quantum Hall effects, and topological phases in InSb have involved collaborations with researchers from Princeton University, Yale University, University of Maryland, and Columbia University. Optical characterizations draw on methods refined at Max Planck Institute for Solid State Research, Institut Laue–Langevin, and ShanghaiTech University.
Epitaxial growth of InSb films employs molecular beam epitaxy and metalorganic vapor phase epitaxy techniques pioneered at Bell Labs, Toho University, and Tohoku University. Substrate engineering often uses materials with matching lattice constants studied at Seoul National University, Technical University of Munich, and Tokyo Institute of Technology. Process development has been advanced by industrial research from Nokia, Siemens, and Samsung Electronics. Characterization during growth frequently uses tools from Hitachi, Zeiss, and Thermo Fisher Scientific, and process control methods reference standards from International Organization for Standardization and IEEE. Heterostructures, quantum wells, and superlattices involving InSb have been fabricated in collaborations with Korea Advanced Institute of Science and Technology, Tsinghua University, and Peking University.
InSb is used in infrared detectors, focal plane arrays, and thermal imaging systems developed by companies such as FLIR Systems, BAE Systems, Thales Group, and Northrop Grumman. It features in terahertz sources and detectors researched at MIT Lincoln Laboratory, Riken, and JAXA and in magnetic sensors and Hall effect devices employed by Bosch, Siemens AG, and Texas Instruments. InSb appears in high-speed transistor research relevant to the semiconductor roadmaps of Intel, TSMC, and GlobalFoundries. Quantum device efforts involving InSb nanowires and proximity-induced superconductivity have been led by groups connected to Microsoft Station Q, University of Copenhagen, Delft University of Technology, and University of California, Santa Barbara.
Handling InSb in laboratory and industrial settings follows protocols similar to those developed by Occupational Safety and Health Administration, European Chemicals Agency, and Health and Safety Executive. Waste management and environmental assessments reference guidelines from United Nations Environment Programme, Environmental Protection Agency, and World Health Organization. Hazard communication and transport involve classification systems used by International Maritime Organization, International Air Transport Association, and OECD chemical safety programs. Occupational exposure controls are implemented in facilities affiliated with Mayo Clinic, Johns Hopkins University, and Cleveland Clinic when medical or biological research intersects with semiconductor fabrication.
Category:Semiconductor materials